Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device

ABSTRACT

The inhomogeneous energy distribution at the beam spot on the irradiated surface is caused by a structural problem and processing accuracy of the cylindrical lens array forming an optical system. 
     According to the present invention, in the optical system for forming a rectangular beam spot, an optical system for homogenizing the energy distribution of the shorter side direction of a rectangular beam spot of a laser light on an irradiated surface is replaced with a light guide. The light guide is a circuit that can confine emitted beams in a certain region and guide and transmit its energy flow in parallel with the axis of a path thereof.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a beam homogenizer which homogenizes abeam spot on a surface to-be-irradiated in a specified area, and furtherrelates to a laser irradiation apparatus which irradiates a homogenizedbeam spot on a surface to-be-irradiated. Note that, a semiconductordevice according to the present invention includes a display device suchas an active matrix liquid crystal display device and an active matrixelectro luminescence display device, an electro-optical device, and anelectrical appliance utilizing such a display device or anelectro-optical device, and the present invention also relates to amethod of manufacturing the semiconductor device.

2. Description of the Related Art

Recently a technique of laser annealing that crystallizes or enhancescrystallinity of an amorphous semiconductor film or a crystallinesemiconductor film (a semiconductor film having crystallinity such aspolycrystallinity or microcrystallinity except for single crystallinity)formed on an insulating substrate of glass or the like has widelystudied. The semiconductor film is generally formed of a siliconsemiconductor film.

In comparison with a quartz substrate that has been commonly used, aglass substrate is more economical, has higher workability and has theadvantage that a substrate having a large area can be easily produced.This is the reason why the studies have been extensively conducted. Alaser is preferably used for crystallization because the melting pointof a glass substrate is low. The laser can impart high energy only tothe non-single crystal semiconductor film without changing thetemperature of the substrate greatly.

A crystalline silicon film formed by performing the laser annealing hasa high mobility. Therefore, thin film transistors (TFTs) are formed byemploying the crystalline silicon film, and they are generally used for,for example, a monolithic liquid-crystal electro-optical device in whichthe TFTs for pixels and for driver circuits are fabricated on one glasssubstrate. Since the crystalline silicon film is formed of a largenumber of crystal grains, it is called a “poly-crystalline silicon film”or a “poly-crystalline semiconductor film”.

Besides, a method wherein a beam from a pulsed laser beam of high power,such as an excimer laser, is processed by an optical system so as todefine a tetragonal spot having a size of several cm square or a linehaving a length of at least 10 cm on a surface to-be-irradiated, and theprojected position of the beam spot is scanned relatively to the surfaceto-be-irradiated, thereby carrying out the laser annealing, ispreferably used since it has good productivity and is industriallysuperior.

When a linear beam spot is used, particularly, unlike in the case ofusing a punctiform beam spot that needs scanning in the forward,backward, right and left directions, the entire surface to-be-irradiatedcan be irradiated with the beam by scanning only in a directionperpendicular to the long side of the linear beam spot. This leads tohigh productivity. The linear beam spot here shall be a rectangular beamspot that has a high aspect ratio. Scanning is carried out in adirection perpendicular to the long side because it is the mostefficient scanning direction. Because of the high productivity, the useof a linear beam spot obtained by processing a pulse excimer laser beamby an adequate optical system in laser annealing is becoming amainstream in the manufacturing technology at present.

An example of an optical system for linearizing the shape of a beam spot(the sectional shape of a laser beam) on the irradiated surface is shownin FIG. 10. This optical system shown in FIG. 10 is a very general one.The aforementioned optical systems not only transform the sectionalshape of the laser beam into a linear shape, but also homogenize theenergy of the beam spot in the irradiated surface at the same time.Generally, an optical system that homogenizes the energy of a beam isreferred to as a beam homogenizer. Namely, an optical system shown inFIG. 10 is also a beam homogenizer.

When the excimer laser, which is ultraviolet light, is used as a lightsource, the host material of the above-mentioned optical system may beentirely quartz, for example. The reason for using quartz resides inthat a high transmittance can be obtained. Further, a coating with 99%or more transmittance on wavelength of the excimer laser that is usedmay preferably be employed.

FIG. 10A showing the side view will be explained first. A laser beamemitted from a laser oscillator 1201 splits the laser beam in onedirection by cylindrical lens arrays 1202 a and 1202 b. The directionshall be referred to as a longitudinal direction here. When a mirror isincorporated midway of the optical system, the longitudinal directionwill follow the direction of light reflected by the mirror. The beamspot of this structure is split into 4 beams. The split spots are thencollected to 1 beam spot by a cylindrical lens 1204. Then, the spot issplit again and reflected at a mirror 1207. Thereafter, the split spotsare again collected to 1 beam spot at an irradiated surface 1209 by adoublet cylindrical lens 1208. A doublet cylindrical lens is a lens thatis formed of two pieces of cylindrical lenses. Consequently, the energyin the longitudinal direction of the linear beam spot is homogenized andthe length of the longitudinal direction of the linear beam spot isdetermined.

FIG. 10B showing the top view will be explained next. A laser beamemitted from the laser oscillator 1201 is split in a directionperpendicular to the longitudinal direction by a cylindrical lens array1203. The perpendicular direction shall be referred to as a lateraldirection here. When a mirror is incorporated midway of the opticalsystem, the lateral direction will follow the direction of lightreflected by the mirror. The beam spot in this structure is split into 7beams. Thereafter, the laser beams split into 7 beams by the cylindricallens 1205 are collected to 1 beam spot at the irradiated surface 1209.The steps shown with reference numerals 1207 to 1209 are drawn in brokenlines; the broken lines show the positions of accurate light paths,lenses, and the irradiated surface in the case where the mirror 1207 isnot arranged. Thus, the energy in the lateral direction of the linearbeam spot is homogenized and the length of the lateral direction is alsodetermined.

As described above, the cylindrical lens arrays 1202 a, 1202 b and 1203work as lenses which split laser beams. Homogeneity of the energydistribution at the linear beam spot depends on the number of splitbeams.

The above lenses in the optical system are made of synthetic quartzresponsive to an excimer laser. Further, the lenses are coated on thesurfaces so that the excimer laser can transmit easily. Therefore, thetransmittance of an excimer laser through one lens can be 99% or more.

The linear beam spot linearized with the above structure of the opticalsystem is irradiated in an overlapping manner with gradual shifts to thelateral direction thereof. That allows to crystallize and to enhance thecrystallinity of the entire surface of a non-single crystal silicon filmby performing laser annealing.

A typical method of manufacturing a semiconductor film that is to be theobject to be irradiated by a laser beam is shown next. First, a 5 inchsquare Corning 1737 substrate having a thickness of 0.7 mm is preparedas the substrate. Then a 200 nm-thick SiO₂ film (silicon oxide film) isformed and a 50 nm-thick amorphous silicon film (hereinafter denoted bya-Si film) is formed on the surface of the SiO₂ film. Both films areformed by employing the plasma CVD apparatus. The substrate is exposedunder an atmosphere containing nitrogen gas at a temperature of 500° C.for 1 hour thereby reducing the hydrogen concentration in the film.Accordingly, resistance of the film to a laser is remarkably improved.

The XeCl excimer laser L4308 (wavelength: 308 nm, pulse width: 30 ns)manufactured by Lambda Co. is used as the laser oscillator. This laseroscillator generates a pulse oscillation laser and has the capacity toemit energy of 670 mJ/pulse. The spot size of the laser beam at the exitof the laser beam is 10×30 mm (both half-width). The exit of the laserbeam is defined by the plane perpendicular to the direction the laserbeam is traveling, immediately after the laser beam is emitted from thelaser oscillator.

The shape of the laser beam generated by the excimer laser is generallyrectangular and is expressed by an aspect ratio which falls under therange of the order of 1 to 5. The intensity of the laser beam spotindicates the Gaussian distribution stronger towards the center of thebeam spot. The spot size of the excimer laser beam is transformed into a125 mm×0.4 mm linear laser beam spot having the homogenous energydistribution by the optical system shown in FIG. 10.

When irradiating a laser beam to the above-mentioned semiconductor film,the most suitable overlapping pitch is approximately 1/10 of the shortwidth (half-width) of the linear beam spot. The uniformity of thecrystallinity in the semiconductor film is thus improved. According tothe above example, the half-width of the linear beam spot was 0.4 mm,and therefore the pulse frequency of the excimer laser was set to 30hertz and the scanning speed was set to 1.0 mm/s thereby irradiating thelaser beam. At this point, the energy density at the irradiated surfaceof the laser beam was set to 450 mJ/cm². The method described hithertois a very general method employed for crystallizing a semiconductor filmby using a linear beam spot.

Some conventional beam homogenizers utilize reflecting mirrors that caneasily perform an accurate processing. (See Japanese Patent laid-open2001-291681, for example.)

High processing accuracy is required for manufacturing the cylindricallens arrays.

A cylindrical lens array is formed of cylindrical lenses arranged in adirection of curved lines. The direction of curved lines here shallrefer to the perpendicular direction of the generatrix of thecylindrical surface. Cylindrical lenses forming a cylindrical lens arrayinvariably have connected portions therebetween. The connected portionsdon't have curved surfaces; a beam irradiated through the connectedportions transmits without being affected by the cylindrical lenses. Thebeam that reaches to the surface to-be-irradiated without the effect cancause the inhomogeneous energy distribution at the rectangular beam spoton the irradiated surface.

The cylindrical lenses forming the cylindrical lens array arenecessarily fabricated with all the same accuracy. When the cylindricallenses have different curvatures, laser beams split by the cylindricallens array are not collected to the same position at an irradiatedsurface even by a condensing lens. Namely, the energy distribution atthe rectangular beam spots on the irradiated surface is not homogenized

The inhomogeneous energy distribution at the beam spot on the irradiatedsurface is caused by a structural problem and processing accuracy of thecylindrical lens array forming an optical system. Namely, inhomogeneityarises from that all the laser beams induced into a homogenizer are notinduced to the part where the cylindrical lenses function and that allthe laser beams split by the cylindrical lens array are not collected tothe same position.

Further, when the semiconductor film is crystallized by scanning arectangular beam spot having the energy distribution in the direction ofthe short side of the rectangular on the irradiated surface indicatingthe gaussian distribution by the means described in the Related Art, astriped pattern in a direction perpendicular to the scanning directionappears clearly on the semiconductor film. The striped patternsynchronizes with inhomogeneous crystallinity of the semiconductor film.For example, the inhomogeneity emerges as a dispersion of electricalcharacteristics of a TFT, and the striped pattern is displayed on apanel employing the TFT.

The striped pattern is due to an instable output of a laser oscillator.Accordingly, the only way to eliminate the striped pattern is improvinga laser oscillator. However, when the energy distribution in thedirection of the short side of the rectangular beam spot on theirradiated surface is homogenized, the instability of the output of thelaser oscillator is averaged and the striped pattern will fade into thebackground. Namely, the emergence of the striped pattern is inhibited.Accordingly, an optical system homogenizing the energy distribution hasbeen required. Naturally, a rectangular beam spot with the homogeneousenergy distribution can be obtained by employing a cylindrical lensarray, however, a highly accurate optical system has been required.

SUMMARY OF THE INVENTION

According to the invention, in the optical system for forming arectangular beam spot, an optical system for homogenizing a rectangularbeam spot on an irradiated surface in energy distribution of a shorterside direction of the spot is replaced with a light guide. The lightguide is a circuit having the ability to trap a light emission in acertain region and guide and transmit its energy flow in parallel withthe axis of a path thereof.

Means for solving the foregoing problems will be illustrated below.FIGS. 1A and 1B show schematic diagrams of assistance in explainingmeans for solving the foregoing problems. First, the top view FIG. 1A,one of the schematic diagrams, will be described. The light guide 1302having two reflective surfaces facing to each other and an irradiationsurface 1303 are prepared to launch a light beam toward them from theleft side of the drawing sheet. The light beam is represented by a solidline 1301 a when the light guide 1302 is present. Also, the light beamis represented by a broken line 1301 b when the light guide 1302 is notpresent.

In the case where the light guide 1302 is not present, light beamsincident from the left side of the sheet reach regions of theirradiation surface 1303 a, 1303 b, and 1303 c, as shown with the lightbeam 1301 b.

In the case where the light guide 1302 is present, incident light beamsare reflected by the reflective surfaces of the light guide 1302 and allof them reach a region of the irradiation surface 1303 b, as shown withthe light beam 1301 a. That is to say, in the case where the light guide1302 is present, all of the incident light beams, which should reachregions of the irradiation surface 1303 a and 1303 c when the lightguide 1302 is not present, reach a region of the irradiation surface1303 b. Accordingly, when a light beam is launched into the light guide1302, the incident light beam is split and then all of the split beamsare overlapped in the same location on the irradiation surface 1303 b.Thus splitting an incident light beam to overlap the split light beamsin the same location can homogenize the energy distribution of the lightin the location where the split beams are overlapped.

In general, the larger the number of beams resulting from the split of alight beam using the homogenizer is, the higher the evenness of energydistribution at a location where the split light beams are overlappedis. A larger number of reflections inside the light guide 1302 canincrease the number of beams resulting from the split of a light beam.In other words, making the two reflective surfaces of the light guidelonger in a direction of launching light beams thereinto may increasethe number of reflections described above. Also, making the spacingbetween the reflective surfaces facing to each other smaller canincrease the number of beams into which a beam is split.

According to another configuration of the invention, in the opticalsystem for forming a rectangular beam spot, an optical system forhomogenizing a rectangular beam spot on an irradiated surface in energydistribution in a direction of a shorter side of the spot is replacedwith a light pipe. The light pipe is a member formed into a cone, apyramid, a cylinder, or the like by pultrusion, which typicallytransmits from one end thereof to the other by reflection.

The laser apparatus herein disclosed is characterized by having ahomogenizer including a light guide or a light pipe as described above.The light guide having two reflective surfaces facing to each other or alight pipe can homogenize a rectangular beam spot on an irradiatedsurface in energy distribution of a shorter side direction.

In manufacturing a semiconductor device, the use of the above laserirradiation apparatus can curb the occurrence of stripe patterns, whichresults from the inhomogeneous energy in a beam spot on an irradiatedsurface, and improve the homogeneous of a semiconductor filmcrystallinity.

In accordance with one aspect of the present invention, the method ofthe present invention comprises the steps of providing a laser beam,passing the laser beam through a light guide, and irradiating asemiconductor film with the laser beam after passing through the lightguide to crystallize the semiconductor film, wherein an energydistribution of the laser beam at a surface of the semiconductor film ishomogenized by the light guide.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 shows a means of the present invention;

FIG. 2 shows an example of a laser irradiation apparatus disclosed inthe present invention;

FIG. 3 shows the energy distribution of the rectangular beam spotprocessed by an optical device shown in FIG. 2;

FIG. 4 shows an example of a laser irradiation apparatus disclosed inthe present invention;

FIG. 5 shows the energy distribution of the rectangular beam spotprocessed by an optical system shown in FIG. 4;

FIG. 6 shows an example of a laser irradiation apparatus disclosed inthe present invention;

FIG. 7 show the energy distribution of the rectangular beam spotprocessed by an optical system shown in FIG. 6;

FIG. 8 shows an example of a laser irradiation apparatus disclosed inthe present invention;

FIG. 9 show the energy distribution of the rectangular beam spotprocessed by an optical system shown in FIG. 8; and

FIG. 10 shows a conventional laser irradiation apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode

An optical system disclosed by the present invention, which produces arectangular beam spot is described referring to FIG. 2.

First, a side view in FIG. 2B will be explained. A laser beam emergentfrom a laser oscillator 1101 is propagated in the direction of arrowsindicated in FIG. 2B. The laser beam is expanded by spherical lenses1102 a and 1102 b. These components are not necessary in a case wherethe beam spot emergent from the laser oscillator 1101 is sufficientlylarge.

A beam spot is converged in the direction of a short side of therectangle by a cylindrical lens 1105 having a second side with acurvature radius of −486 mm and a thickness of 20 mm. A sign of acurvature radius shall be a plus when the center of the curvature is onthe side where the beam exits with respect to the face of a lens, andthe sign shall be a minus when the center of the curvature is on theside where the laser enters with respect to the surface of a lens.Further, the face of the lens where the beam enters shall be a firstsurface, and the face of the lens where the beam exits shall be a secondsurface. The energy distribution at the short side of the rectangularbeam spot on the irradiated surface is homogenized by a light guide 1106having two reflecting surfaces 1106 a and 1106 b facing each other,placed 1030 mm behind the cylindrical lens 1105. The light guide 1106has a length of 300 mm in the direction of a beam emission, and thedistance between the reflecting surfaces shall be 2 mm.

In a conventional optical system, the inhomogeneous energy distributionof a rectangular beam spot on an irradiated surface was caused by theproblems of a structure and manufacturing accuracy of a cylindrical lensarray, and manufacturing accuracy of a cylindrical lens which combinesthe split laser beams. An optical system according to the presentinvention having a light guide 1302 can mend the problems mentionedabove.

By doublet cylindrical lenses 1107 a and 1107 b disposed 1250 mm behind,a laser beam exits from the light guide 1106 is converged in thedirection of the short side of the rectangular on an irradiated surface1108 disposed 237 mm behind the doublet cylindrical lenses. A doubletcylindrical lens here refers to a lens formed of two cylindrical lenses.One of the two cylindrical lenses forming the doublet cylindrical lenshas a first surface with a curvature radius of 125 mm, a second surfacewith a curvature radius of +77 mm and a thickness of 10 mm; the othercylindrical lens has a first surface with a curvature radius of +97 mm,a second surface with a curvature radius of −200 mm and a thickness of20 mm. The two cylindrical lenses have an interval of 5.5 mmtherebetween. Consequently, the energy distribution at a short side of arectangular beam spot is homogenized and the length of the short sidedirection is determined. The doublet cylindrical lenses are notnecessarily used, however, the doublet cylindrical lenses allow anoptical system and the irradiated surface to have a space therebetween,and room can be obtained.

The top view of FIG. 2A is explained next. The spot of a laser beamemitted from the laser oscillator 1101 is split in the direction of thelong side of a rectangle by the cylindrical lens arrays 1103 a and 1103b. The cylindrical lens array 1103 a comprises thirty cylindrical lenseseach having a curvature radius of 28 mm, a thickness of 5 mm, and awidth of 2 mm arranged in a direction of curved lines. The cylindricallens array 1103 b comprises thirty cylindrical lenses each having acurvature radius of −13.33 mm, a thickness of 5 mm and a width of 2 mmarranged in the direction of curved lines. And the cylindrical lensarrays 1103 a and 1103 b shall have an interval of 88 mm therebetween.Thereafter, the laser beams are combined on the irradiated surface 1108by a cylindrical lens 1104 having a first surface with a curvatureradius of 2140 mm and a thickness of 20 mm disposed 120 mm behind thecylindrical lens 1103 b. Consequently, the energy distribution of thelong side of the rectangular beam spot is homogenized and the length ofthe long side direction is determined.

FIG. 3 shows the result of a simulation run with optical designsoftware, wherein a beam spot with the homogenous energy distribution,which has a length of the long side direction of 300 mm and the lengthof the short side direction of 0.4 mm, can be obtained. FIG. 3A is adiagram showing the energy distribution at the part spreads ±0.3 mm in adirection of the long side and ±0.2 mm in a direction of the short sidefrom the center of the rectangular beam spot. FIG. 3B shows a crosssectional view of the energy distribution at the center of a short sideof the rectangular beam spot.

In the above structure, it is preferable that the laser oscillatorcombined with an optical system according to the present invention hashigh output in a wavelength band so as to be well absorbed bysemiconductor films. If a silicon film is used for a semiconductor film,it is preferable that, considering the absorption index, the wavelengthof the laser beam emitted from the laser oscillator used be equal to orless than 600 nm. Excimer lasers, YAG lasers (higher harmonics) andglass lasers (higher harmonics) may be used, for example, as laseroscillators for emitting this type of laser beams.

Further, although high power has not been attained with currenttechnology yet, for example, YVO₄ lasers (higher harmonics), YLF lasers(higher harmonics), and Ar lasers, can be named as laser oscillatorsproducing lasers with wavelengths suitable for crystallization of asilicon film.

Hereinafter, manufacturing method of a semiconductor device according tothe present invention, wherein a beam homogenizer and a laserirradiation apparatus according to the present invention are appliedwill be described. First, a glass substrate (“Corning 1737 Glass”) witha size of 127 mm square and 0.7 mm thick is prepared. The substratesufficiently endures temperatures up to 600° C. On the glass substrate,a silicon oxide film is formed as a base film to a thickness of 200 nm.Further, an amorphous silicon film is formed on the silicon oxide filmto have a thickness of 55 nm. Both of the films are formed bysputtering. Alternatively, they may be formed by plasma CVD.

The substrate formed with the deposited films is heated in a nitrogenatmosphere of 450° C. for one hour. The heating process serves to reducethe hydrogen content of the amorphous silicon film. When hydrogencontained in the amorphous silicon film is of large amount, this filmcannot resist laser energy, and hence, the heating step is carried out.The hydrogen content of the film should properly be in the order of10²⁰/cm³. Here, the expression “10²⁰/cm³” signifies that 10²⁰ hydrogenatoms exist per 1 cm³.

In this Embodiment Mode, an XeCl excimer laser “L4308” manufactured byLambda Physik, Inc. is used as a laser oscillator. The excimer laser isa pulsed laser. The maximum energy of the excimer laser is 670 mJ perpulse, the oscillating wavelength thereof is 308 nm, and the maximumfrequency thereof is 300 Hz. When the energy fluctuation of theindividual pulses of the pulse laser is confined within ±10%, preferablywithin ±5%, during the laser processing of one substrate, homogeneouscrystallization can be effected.

The fluctuation of laser energy levels stated here is defined asfollows: The average value of the laser energy levels in the time periodof the irradiation of one substrate is set as a criterion, and thedifference between the minimum energy or maximum energy and the averagevalue in the time period is indicated in terms of %.

The irradiation with the laser beam is performed, for example, byscanning a stage on which a surface to-be-irradiated 1108 shown in FIG.2 is placed in a direction of a short side of a rectangular beam spot.On this occasion, the energy density of the beam spot and the speed ofthe scanning on the surface to-be-irradiated 1108 may be properlydetermined by the operator of the optical system. As an approximate aim,the energy density lies within a range of 200 mJ/cm² to 1000 mJ/cm².When the scanning speed is appropriately chosen so that the widths of ashort side direction of the rectangular beam spot may overlap each otherwithin a range of about 90% or more, homogeneous laser annealing isperformed with a high possibility. The optimum scanning speed dependsupon the pulse frequency of the laser oscillator, and may be consideredproportional to the frequency.

In this way, a laser annealing process is completed. A large number ofsubstrates can be processed by repeating the process. A liquid crystaldisplay of an active matrix type, for example, can be fabricated byutilizing the substrate, The fabrication may be done in accordance witha known method.

In the above example, the excimer laser is employed as the laseroscillator. The excimer laser is suitable for the optical system of theabove described example since a coherence length thereof is exceedinglysmall as several μm. Some of the lasers mentioned below have a longcoherence length originally, however, lasers with a coherence lengthchanged artificially can be employed. The higher harmonics of a YAGlaser or those of a glass laser are preferably utilized alternatively,for the reasons that a similar high power is attained, and that theenergy of the laser beam is absorbed much by the silicon film. As laseroscillators suitable for the crystallization of the silicon film, suchas a YVO₄ laser (higher harmonics), a YLF laser (higher harmonics), anAr laser are given as examples. The wavelength band of these laser beamsare absorbed well by the silicon film.

Although the amorphous silicon film is mentioned as the non-singlecrystalline semiconductor film in the above example, it is readilyconjectured that the present invention will be applicable to othernon-single crystalline semiconductor films. By way of example, thenon-single crystalline semiconductor film may well be a compoundsemiconductor film having an amorphous structure, such as an amorphoussilicon-germanium film. Alternatively, the non-single crystallinesemiconductor film may well be used as a poly-crystalline silicon film.

Embodiment 1

An example of optical system other than the above-described opticalsystem will be described here.

FIGS. 4A and 4B show an example of the optical system to be explained inthis embodiment. First, a side view of FIG. 4B will be described. Alaser beam emitted from the laser oscillator 1401 is propagated toward adirection of arrows indicated in the drawing. The beam spot is reducedin size in a direction of its shorter side using a 10 mm-thickcylindrical lens 1402 having a second surface of −182 mm in curvatureradius. The light guide 1405, which has two reflective surfaces 1405 aand 1405 b facing to each other, is so placed that the beam inletthereof lies in a focused area of the cylindrical lens. The light guide1405 homogenizes the energy distribution of a beam spot. The light guide1405 has a length of 300 mm in a direction in which a light beam travelsand a distance of 0.4 mm between the reflective surfaces. An irradiationsurface 1406 is placed at a location 0.2 mm away from the beam outlet ofthe light guide 1405. On the irradiation surface 1406, a rectangularbeam spot having a homogenized energy distribution and measuring 0.4 mmin its shorter side is formed.

Second, a top view of FIG. 4A will be described. A laser beam emittedfrom the laser oscillator 1401 is propagated toward a direction ofarrows indicated in the drawing. The beam passes through a cylindricallens array 1403 composed of seven 3 mm-wide cylindrical lenses bonded ina direction of curvature, each having a first surface of +35 mm incurvature radius, whereby the beam is split in a direction of a longerside of the rectangle. The split beams pass through a 5 mm-thickcylindrical lens 1404 having a first surface of +816 mm in curvatureradius, whereby the beams are overlapped on the irradiation surface1406. Thus, a rectangular beam spot with its energy distributionhomogenized in a direction of a longer side of the rectangle can beproduced. In the case where the cylindrical lens 1404 has a longer focallength, the ability to condense light is impaired. On this account, thecylindrical lens 1404 does not have to be incorporated.

The optical system shown in FIGS. 4A and 4B allows the formation of arectangular beam spot having a homogenized energy distribution andmeasuring 0.4 mm in a shorter side of the rectangle. FIGS. 5A and 5Bshow the result of the simulation performed with an optical designsoftware. FIG. 5A is a view showing the energy distribution of arectangular beam spot in a portion ranging ±0.3 mm in a longer sidedirection and ±0.2 mm in a shorter side direction from the center of thespot. FIG. 5B is a cross sectional view of the energy distribution of arectangular beam spot in a center portion of the rectangle in a shorterside direction thereof.

Embodiment 2

An example of optical system other than the above-described opticalsystems will be described here. FIGS. 6A and 6B show an example of theoptical system to be explained in this embodiment.

First, a side view of FIG. 6B will be described. In this drawing, alaser beam goes through exactly the same optical path as illustrated inFIGS. 4A and 4B until the laser beam reaches the light guide 1605 havingtwo reflective surfaces 1605 a and 1605 b facing to each other. Thelight guide 1605 has two reflective surfaces facing to each other likethe light guide 1405. The light guide 1605 measures 900 mm long in adirection in which a light beam travels and has a distance of 2.6 mmbetween the reflective surfaces. A light beam output from the lightguide 1605 is shaped so as to form a rectangular beam spot measuring 2.6mm in its shorter side with the energy distribution homogenized in adirection of the shorter side. The light beam output from the lightguide 1605 is reduced in size by a doublet cylindrical lens 1606 a and1606 b arranged 1000 mm behind the light guide 1605. Then, the beam iscondensed on an irradiation surface 1607 arranged 220 mm behind thedoublet cylindrical lens. The doublet cylindrical lens is composed of: a10 mm-thick cylindrical lens having a first surface of +125 mm and asecond surface of +69 mm in curvature radius; and a 20 mm-thickcylindrical lens having a first surface of +75 mm and a second surfaceof −226 mm in curvature radius. In addition, the spacing between thecylindrical lenses is 1 mm. On the irradiation surface 1607, there isformed a rectangular beam spot with the energy distribution homogenizedin a direction of a shorter side of the rectangle. The doublet lens maybe replaced with a 30 mm-thick cylindrical lens having a first surfaceof +963 mm in curvature radius and a second surface of −980 mm incurvature radius. In this case, the cylindrical lens is arranged 2000 mmbehind the light guide 1605 and the irradiation surface 1607 is 2000 mmbehind the cylindrical lens, preferably.

Second, a top view of FIG. 6A will be described. A laser beam emittedfrom the laser oscillator 1601 is propagated toward a direction ofarrows indicated in this drawing. The beam passes through a cylindricallens array 1603 composed of seven 3 mm-thick, 3 mm-wide cylindricallenses bonded in a direction of curvature, each having a first surfaceof +35 mm in curvature radius, whereby the beam is split in a directionof a longer side of the rectangle. The split beams pass through a 5mm-thick cylindrical lens 1604 having a first surface of +816 mm incurvature radius, whereby the beams are overlapped on the irradiationsurface 1607. Thus, a rectangular beam spot with its energy distributionhomogenized in a direction of a longer side of the rectangle can beproduced. In the case where the cylindrical lens 1604 has a longer focallength, its ability to condense light is impaired. On this account, thecylindrical lens 1604 does not have to be placed necessarily.

The optical system shown in FIGS. 6A and 6B allows the formation of arectangular beam spot having a homogenized energy distribution andmeasuring 0.6 mm in a shorter side of the rectangle. FIGS. 7A and 7Bshow the result of the simulation performed with the optical designsoftware. FIG. 7A is a view showing the energy distribution of arectangular beam spot in a portion ranging ±0.3 mm in a longer sidedirection and ±0.2 mm in a shorter side direction from the center of thespot. FIG. 7B is a cross sectional view of the energy distribution of arectangular beam spot in a center portion of the rectangle in a shorterside direction thereof.

The optical system shown in this embodiment may be used to perform thelaser annealing of a semiconductor film, for example, under the methodaccording to Embodiment Mode. The use of semiconductor films allows themanufacture of active matrix type liquid crystal displays, for example.Such manufacture may be carried out by those skilled in the artaccording to a known method.

Embodiment 3

An example of optical systems other than the above-described opticalsystems will be described here. FIGS. 8A and 8B show an example of theoptical system to be explained in the embodiment.

In the drawings, a laser beam goes through exactly the same optical pathas illustrated in FIGS. 4A and 4B except the light guide 1805. The lightguide 1805 has two reflective surfaces facing to each other like thelight guide 1405. The light guide 1405 has a hollow space between thetwo reflective surfaces facing to each other, whereas the light guide1805 has a space filled with a medium 1805 c having a refractive indexof n between the reflective surfaces. This is different point betweenthe two examples. In the case where the refractive index n of the mediumis larger than that of the material from which the reflective surface isformed, a light beam is totally reflected off the reflective surfacewhen the light beam enters the light guide 1805 at a angle smaller thanor equal to the critical angle of incidence. In other words, on thisoccasion, the transmissivity of the light guide for a light beam becomeshigher compared to the case where the beam does not undergo the totalinternal reflection. Therefore, a light beam from the light source 1801can be condensed on the irradiation surface 1806 with higher efficiency.Incidentally, the cylindrical lens 1804 does not have to be placednecessarily.

The optical system shown in FIGS. 8A and 8B allows the formation of arectangular beam spot having a homogenized energy distribution andmeasuring 0.4 mm in a shorter side of the rectangle. The refractiveindexes of the medium and the material from which the reflective surfaceis formed are herein 1.521 and 1.464, respectively. FIGS. 9A and 9B showthe result of the simulation performed with the optical design software.FIG. 9A is a view showing the energy distribution of a rectangular beamspot in a portion ranging ±0.3 mm in a longer side direction and ±0.2 mmin a shorter side direction from the center of the spot. FIG. 9B is across sectional view of the energy distribution of a rectangular beamspot in a center portion of the rectangle in a shorter side directionthereof.

The optical system shown in this embodiment may be used to perform thelaser annealing of a semiconductor film, for example, under the methodaccording to Embodiment Mode. The use of semiconductor films allows themanufacture of active matrix type liquid crystal displays orelectroluminescence displays, for example. Such manufacture may becarried out by those skilled in the art according to a known method.

The laser irradiation apparatus herein disclosed is characterized byhaving a homogenizer including a light guide or a light pipe asdescribed above. The light guide or the light pipe have two reflectivesurfaces facing to each other and can homogenize the energy distributionat a shorter side direction of a rectangular beam spot on an irradiatedsurface.

1. A beam homogenizer comprising: a cylindrical lens for converging alaser light in a width direction; and a light guide for homogenizing anenergy distribution of the laser light along the width direction of aline-shape on an irradiated surface, wherein a beam spot of the laserlight is shaped into the line-shape on the irradiated surface, whereinthe light guide comprises two reflective surfaces facing to each other,and wherein the width direction is a direction of a short side of theline-shape on the irradiated surface.
 2. A beam homogenizer comprising:a cylindrical lens for converging a laser light in a width direction;and a light pipe for homogenizing an energy distribution of the laserlight along the width direction of a line-shape on an irradiatedsurface, wherein a beam spot of the laser light is shaped into theline-shape on the irradiated surface, wherein the light pipe comprisestwo reflective surfaces facing to each other, and wherein the widthdirection is a direction of a short side of the line-shape on theirradiated surface.
 3. A beam homogenizer comprising: a firstcylindrical lens for converging a laser light in a width direction; alight guide for homogenizing an energy distribution of the laser lightalong the width direction of a line-shape on an irradiated surface; andat least one second cylindrical lens for condensing the laser lightoutput from the light guide along the width direction of the line-shapeon the irradiated surface, wherein a beam spot of the laser light isshaped into the line-shape on the irradiated surface, wherein the lightguide comprises two reflective surfaces facing to each other, andwherein the width direction is a direction of a short side of theline-shape on the irradiated surface.
 4. A beam homogenizer comprising:a first cylindrical lens for converging a laser light in a widthdirection; a light pipe for homogenizing an energy distribution of thelaser light along the width direction of a line-shape on an irradiatedsurface; and at least one second cylindrical lens for condensing thelaser light output from the light pipe along the width direction of theline-shape on the irradiated surface, wherein a beam spot of the laserlight is shaped into the line-shape on the irradiated surface, whereinthe light pipe comprises two reflective surfaces facing to each other,and wherein the width direction is a direction of a short side of theline-shape on the irradiated surface.
 5. A beam homogenizer comprising:a unit for homogenizing an energy distribution of a laser light along alength direction of a line-shape on an irradiated surface; a cylindricallens for converging the laser light in a width direction; and a lightguide for homogenizing the energy distribution along the width directionof the line-shape on the irradiated surface, wherein the unit has atleast a cylindrical lens array, wherein a beam spot of the laser lightis shaped into the line-shape on the irradiated surface, wherein thelight guide comprises two reflective surfaces facing to each other, andwherein the width direction is a direction of a short side of theline-shape on the irradiated surface and the length direction is adirection of a long side of the line-shape on the irradiated surface. 6.A beam homogenizer comprising: a unit for homogenizing an energydistribution of a laser light along a length direction of a line-shapeon an irradiated surface; a cylindrical lens for converging the laserlight in a width direction; and a light pipe for homogenizing the energydistribution along the width direction of the line-shape on theirradiated surface, wherein the unit has at least a cylindrical lensarray, wherein a beam spot of the laser light is shaped into theline-shape on the irradiated surface, wherein the light pipe comprisestwo reflective surfaces facing to each other, and wherein the widthdirection is a direction of a short side of the line-shape on theirradiated surface and the lenath direction is a direction of a lonaside of the line-shape on the irradiated surface.
 7. A laser irradiationapparatus comprising: a laser oscillator; and a beam homogenizer,wherein the beam homogenizer comprises a cylindrical lens for converginga laser light in a width direction and a light guide for homogenizing anenergy distribution of the laser light along the width direction of aline-shape, wherein a beam spot of the laser light is shaped into theline-shape on an irradiated surface, wherein the light guide comprisestwo reflective surfaces facing to each other, and wherein the widthdirection is a direction of a short side of the line-shape on theirradiated surface.
 8. The laser irradiation apparatus according toclaim 7, wherein the laser oscillator is a YAG laser, or a glass laser.9. The laser irradiation apparatus according to claim 7, wherein thelaser oscillator is a YVO₄ laser, a YLF laser, or an Ar laser.
 10. Alaser irradiation apparatus comprising: a laser oscillator; and a beamhomogenizer, wherein the beam homogenizer comprises a first cylindricallens for converging a laser light in a width direction, a light guidefor homogenizing an energy distribution of the laser light along thewidth direction of a line-shape, and at least one second cylindricallens for condensing the laser light output from the light guide alongthe width direction of the line-shape, wherein the light guide comprisestwo reflective surfaces facing to each other, wherein a beam spot of thelaser light is shaped into the line-shape on an irradiated surface, andwherein the width direction is a direction of a short side of theline-shape on the irradiated surface.
 11. The laser irradiationapparatus according to claim 10, wherein the laser oscillator is a YAGlaser, or a glass laser.
 12. The laser irradiation apparatus accordingto claim 10, wherein the laser oscillator is a YVO₄ laser, a YLF laser,or an Ar laser.
 13. A laser irradiation apparatus comprising: a laseroscillator; and a beam homogenizer, wherein the beam homogenizercomprises a cylindrical lens for converging a laser light in a widthdirection and a light pipe for homogenizing an energy distribution ofthe laser light along the width direction of a line-shape, wherein abeam spot of the laser light is shaped into the line-shape on anirradiated surface, wherein the light pipe comprises two reflectivesurfaces facing to each other, and wherein the width direction is adirection of a short side of the line-shape on the irradiated surface.14. The laser irradiation apparatus according to claim 13, wherein thelaser oscillator is a YAG laser, or a glass laser.
 15. The laserirradiation apparatus according to claim 13, wherein the laseroscillator is a YVO₄ laser, a YLF laser, or an Ar laser.
 16. A laserirradiation apparatus comprising: a laser oscillator; and a beamhomogenizer, wherein the beam homogenizer comprises a first cylindricallens for converging a laser light in a width direction, a light pipe forhomogenizing an energy distribution of the laser light along the widthdirection of a line-shape, and at least one second cylindrical lens forcondensing the laser light output from the light pipe along the widthdirection of the line-shape, wherein the light pipe comprises tworeflective surfaces facing to each other, wherein a beam spot of thelaser light is shaped into the line-shape on an irradiated surface, andwherein the width direction is a direction of a short side of theline-shape on the irradiated surface.
 17. The laser irradiationapparatus according to claim 16, wherein the laser oscillator is a YAGlaser, or a glass laser.
 18. The laser irradiation apparatus accordingto claim 16, wherein the laser oscillator is a YVO₄ laser, a YLF laser,or an Ar laser.
 19. A method of manufacturing a semiconductor device,comprising the steps of: forming a non-single-crystal semiconductor filmon a substrate; generating a laser beam with a laser beam oscillator;using at least a cylindrical lens array, a cylindrical lens and a lightguide to shape the laser beam so as to form a linear beam spot of alaser light on an irradiated surface with its energy distribution alonga width direction homogenized; setting the substrate with thenon-single-crystal semiconductor film formed thereon on a stage to makea surface of the non-single-crystal semiconductor film coincide with theirradiated surface; and performing a laser annealing of thenon-single-crystal semiconductor film by irradiating the semiconductorfilm surface with the linear laser light while causing the stage to scanrelative to the laser light, wherein the cylindrical lens array acts onthe linear beam spot along a length direction of the spot, wherein thelight guide and the cylindrical lens act on the linear beam spot alongthe width direction of the spot, wherein the light guide comprises tworeflective surfaces facing to each other, and wherein the widthdirection is a direction of a short side of the linear beam spot and thelength direction is a direction of a long side of the linear beam spot.20. The method of manufacturing a semiconductor device according toclaim 19, wherein the laser beam oscillator is a YAG laser, or a glasslaser.
 21. The method of manufacturing a semiconductor device accordingto claim 19, wherein the laser beam oscillator is a YVO₄ laser, a YLFlaser, or an Ar laser.
 22. A method of manufacturing a semiconductordevice, comprising the steps of: forming a non-single-crystalsemiconductor film on a substrate; generating a laser beam with a laserbeam oscillator; using at least a cylindrical lens array, a firstcylindrical lens, a light guide and a second cylindrical lens to shapethe laser beam so as to form a linear beam spot of a laser light on anirradiated surface with its energy distribution along a width directionhomogenized; setting the substrate with the non-single-crystalsemiconductor film formed thereon on a stage to make a surface of thenon-single-crystal semiconductor film coincide with the irradiatedsurface; and performing a laser annealing of the non-single-crystalsemiconductor film by irradiating the semiconductor film surface withthe linear laser light while causing the stage to scan relative to thelaser light, wherein the cylindrical lens array acts on the linear beamspot along a length direction of the spot, wherein the light guide, thefirst cylindrical lens and the second cylindrical lens act on the linearbeam spot along the width direction of the spot, wherein the light guidecomprises two reflective surfaces facing to each other, and wherein thewidth direction is a direction of a short side of the linear beam spotand the length direction is a direction of a long side of the linearbeam spot.
 23. The method of manufacturing a semiconductor deviceaccording to claim 22, wherein the laser beam oscillator is a YAG laser,or a glass laser.
 24. The method of manufacturing a semiconductor deviceaccording to claim 22, wherein the laser beam oscillator is a YVO₄laser, a YLF laser, or an Ar laser.
 25. A method of manufacturing asemiconductor device, comprising the steps of: forming anon-single-crystal semiconductor film on a substrate; generating a laserbeam with a laser beam oscillator; using at least a cylindrical lensarray, a cylindrical lens and a light pipe to shape the laser beam so asto form a linear beam spot of a laser light on an irradiated surfacewith its energy distribution along a width direction homogenized;setting the substrate with the non-single-crystal semiconductor filmformed thereon on a stage to make a surface of the non-single-crystalsemiconductor film coincide with the irradiated surface; and performinga laser annealing of the non-single-crystal semiconductor film byirradiating the semiconductor film surface with the linear laser lightwhile causing the stage to scan relative to the laser light, wherein thecylindrical lens array acts on the linear beam spot along a lengthdirection of the spot, wherein the light pipe and the cylindrical lensact on the linear beam spot along the width direction of the spot,wherein the light pipe comprises two reflective surfaces facing to eachother, and wherein the width direction is a direction of a short side ofthe linear beam spot and the length direction is a direction of a lonaside of the linear beam spot.
 26. The method of manufacturing asemiconductor device according to claim 25, wherein the laser beamoscillator is a YAG laser, or a glass laser.
 27. The method ofmanufacturing a semiconductor device according to claim 25, wherein thelaser beam oscillator is a YVO₄ laser, a YLF laser, or an Ar laser. 28.A method of manufacturing a semiconductor device, comprising the stepsof: forming a non-single-crystal semiconductor film on a substrate;generating a laser beam with a laser beam oscillator; using at least acylindrical lens array, a first cylindrical lens, a light pipe and asecond cylindrical lens to shape the laser beam so as to form a linearbeam spot of a laser light on an irradiated surface with its energydistribution along a width direction homogenized; setting the substratewith the non-single-crystal semiconductor film formed thereon on a stageto make a surface of the non-single-crystal semiconductor film coincidewith the irradiated surface; and performing a laser annealing of thenon-single-crystal semiconductor film by irradiating the semiconductorfilm surface with the linear laser light while causing the stage to scanrelative to the laser light, wherein the cylindrical lens array acts onthe linear beam spot along a length direction of the spot, wherein thelight pipe, the first cylindrical lens and the second cylindrical lensact on the linear beam spot along the width direction of the spot,wherein the light pipe comprises two reflective surfaces facing to eachother, and wherein the width direction is a direction of a short side ofthe linear beam spot and the length direction is a direction of a longside of the linear beam spot.
 29. The method of manufacturing asemiconductor device according to claim 28, wherein the laser beamoscillator is a YAG laser, or a glass laser.
 30. The method ofmanufacturing a semiconductor device according to claim 28, wherein thelaser beam oscillator is a YVO₄ laser, a YLF laser, or an Ar laser. 31.A method of manufacturing a semiconductor device comprising: providing alaser light; passing the laser light through a cylindrical lens forconverging the laser light in a width direction; passing the laser lightthrough a light guide; and irradiating a semiconductor film with thelaser light after passing through the light guide to crystallize thesemiconductor film, wherein an energy distribution along the widthdirection of the laser light at a surface of the semiconductor film ishomogenized by the light guide, wherein the light guide comprises tworeflective surfaces facing to each other, and wherein the widthdirection is a direction of a short side of the laser light.
 32. Amethod of manufacturing a semiconductor device comprising: providing alaser light; passing the laser light through a cylindrical lens forconverging the laser light in a width direction; passing the laser lightthrough a light pipe; and irradiating a semiconductor film with thelaser light after passing through the light pipe to crystallize thesemiconductor film, wherein an energy distribution along the widthdirection of the laser light at a surface of the semiconductor film ishomogenized by the light pipe, wherein the light pipe comprises tworeflective surfaces facing to each other, and wherein the widthdirection is a direction of a short side of the laser light.
 33. Amethod of manufacturing a semiconductor device comprising: providing alaser light having a cross section perpendicular to a propagationdirection of the laser light wherein the cross section has a length anda width; increasing only the length of the cross section of the laserlight; passing the laser light through a cylindrical lens for convergingthe laser light in a width direction; passing the laser light through alight guide; and irradiating a semiconductor film with the laser lightafter passing through the light guide to crystallize the semiconductorfilm, wherein an energy distribution of the laser light along a widthdirection of the cross section is homogenized by the light guide,wherein the light guide comprises two reflective surfaces facing to eachother, and wherein the width direction is a direction of a short side ofthe laser light.
 34. A method according to claim 33, wherein the lengthof the cross section of the laser light is increased by using acylindrical lens array having a plurality of cylindrical lenses.
 35. Amethod of manufacturing a semiconductor device comprising: providing alaser light having a cross section perpendicular to a propagationdirection of the laser light wherein the cross section has a length anda width; increasing only the length of the cross section of the laserlight; passing the laser light through a cylindrical lens for convergingthe laser light in a width direction; passing the laser light through alight pipe; and irradiating a semiconductor film with the laser lightafter passing through the light pipe to crystallize the semiconductorfilm, wherein an energy distribution of the laser light along a widthdirection of the cross section is homogenized by the light pipe, whereinthe light pipe comprises two reflective surfaces facing to each other,and wherein the width direction is a direction of a short side of thelaser light.
 36. A method according to claim 35, wherein the length ofthe cross section of the laser light is increased by using a cylindricallens array having a plurality of cylindrical lenses.
 37. The laserirradiation apparatus according to claim 7, wherein the laser oscillatoris an excimer laser.
 38. The laser irradiation apparatus according toclaim 10, wherein the laser oscillator is an excimer laser.
 39. Thelaser irradiation apparatus according to claim 13, wherein the laseroscillator is an excimer laser.
 40. The laser irradiation apparatusaccording to claim 16, wherein the laser oscillator is an excimer laser.41. The method of manufacturing a semiconductor device according toclaim 19, wherein the laser beam oscillator is an excimer laser.
 42. Themethod of manufacturing a semiconductor device according to claim 22,wherein the laser beam oscillator is an excimer laser.
 43. The method ofmanufacturing a semiconductor device according to claim 25, wherein thelaser beam oscillator is an excimer laser.
 44. The method ofmanufacturing a semiconductor device according to claim 28, wherein thelaser beam oscillator is an excimer laser.